Part Number Hot Search : 
1A08AV 1N5391 2N706C 2SK2562 M471B5 ADM330 2N706C TC2683
Product Description
Full Text Search
 

To Download MMBT4401 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
Epitaxial planar die construction. Complementary PNP type available: MMBT4403. Ideal for medium power amplification and switching.
Production specification
MMBT4401
Pb
Lead-free
APPLICATIONS
General purpose application, switching application. SOT-23
ORDERING INFORMATION
Type No. MMBT4401 Marking 2X Package Code SOT-23
MAXIMUM RATING @ Ta=25 unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Value 60 40 6 600 350 -55~150 Units V V V mA mW
Document number: BL/SSSTC073 Rev.A
www.galaxycn.com 1
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Production specification
MMBT4401
ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100A,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO V(BR)EBO
IC=1mA,IB=0
B
40 6
V
Emitter-base breakdown voltage
IE=100A,IC=0
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1
A
Collector cut-off current
ICEO
VCE=35V,IE=0
0.1
A
Emitter cut-off current
IEBO
VEB=5V,IC=0 VCE=1V,IC=0.1mA VCE=1V,IC=1.0mA 20 40 80 100 40
0.1
A
DC current gain
hFE
VCE=1V,IC=10mA VCE=1V,IC=150mA VCE=2V,IC=500mA
300
Collector-emitter saturation voltage
VCE(sat)
IC=150mA, IB=15mA IC=500mA, IB=50mA
B B
0.4 0.75 0.75 0.95 1.2 250 6.5
V
Base-emitter saturation voltage Transition frequency Collector output capacitance
VBE(sat) fT Cob
IC=150mA, IB=15mA IC=500mA, IB=50mA
B B
V MHz pF
VCE=10V, IC= 20mA f=100MHz VCB=5V,IE=0,f=1MHz
Document number: BL/SSSTC073 Rev.A
www.galaxycn.com 2
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Production specification
MMBT4401
TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified
Document number: BL/SSSTC073 Rev.A
www.galaxycn.com 3
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A E
Production specification
MMBT4401
SOT-23
SOT-23
Dim A B C D Min 2.85 1.25 0.37 0.35 1.85 0.02 2.35 Max 2.95 1.35 0.43 0.48 1.95 0.1 2.45
K
B
1.0Typical
D G
J
E G H
H C
J K
0.1Typical
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
Device MMBT4401
INFORMATION
Package SOT-23 Shipping 3000/Tape&Reel
Document number: BL/SSSTC073 Rev.A
www.galaxycn.com 4


▲Up To Search▲   

 
Price & Availability of MMBT4401

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X